2inch Silicon Carbide wafer Diameter 50.8mm P grade R grade D drade Double Side Polished
Product Description:
The Silicon Carbide Wafer is a high-performance material that is used in the production of electronic devices. It is made from a Silicon Carbide Layer on top of a Silicon wafer and is available in different grades, types, and surface finishes. The wafer has a flatness of Lambda/10, which ensures that the electronic devices made from the wafer are of the highest quality and performance. The Silicon Carbide Wafer is an ideal material for use in power electronics, LED technology, and advanced sensors. We provide high-quality SiC wafer( Silicon Carbide ) to the electronic and optoelectronic industry.
Character:
SIC (Silicon Carbide) wafer is a type of semiconductor wafer based on silicon carbide material. Compared to conventional silicon (Si) wafers, SIC wafers have the following characteristics:
1. Higher Thermal Conductivity: SIC wafer has a much higher thermal conductivity than silicon, meaning SIC wafers can effectively dissipate heat and are suitable for operation in high-temperature environments.
2. Higher Electron Mobility: SIC wafer has higher electron mobility than silicon, allowing SIC devices to operate at higher speeds.
3. Higher Breakdown Voltage: SIC wafer material has a higher breakdown voltage, making it suitable for manufacturing high-voltage semiconductor devices.
4. Higher Chemical Stability: SIC wafer exhibits greater resistance to chemical corrosion, contributing to improved reliability and durability of devices.
5. Wider Bandgap: SIC wafer has a wider bandgap than silicon, enabling SIC devices to perform better and more stably at high temperatures.
6. Better Radiation Resistance: SIC wafers have stronger resistance to radiation, making them suitable for use in radiation environments
such as spacecraft and nuclear facilities.
7. Higher Hardness: SIC wafer is harder than silicon, enhancing the durability of wafers during processing.
8. Lower Dielectric Constant: SIC wafer has a lower dielectric constant than silicon, helping to reduce parasitic capacitance in devices and improve high-frequency performance.
9. Higher Saturation Electron Drift Velocity: SIC wafer has a higher saturation electron drift velocity than silicon, giving SIC devices an advantage in high-frequency applications.
10.Higher Power Density: With the aforementioned features, SIC wafer devices can achieve higher power output in smaller sizes.
| Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 50.8 mm±0.38 mm |
| Thickness | 330 μm±25μm |
| Wafer Orientation | On axis : <0001>±0.5°
for 6H-N/4H-N/4H-SI/6H-SI | Off axis:4.0° toward 1120±0.5° for 4H-N/4H-SI |
| Micropipe Drientation(cm-2) | ≤5 | ≤15 | ≤50 |
| Resistivity(Ω·cm) | 4H-N | 0.015~0.028 Ω·cm |
| 6H-N | 0.02~0.1 |
| 4/6H-SI | >1E5 | (90%) >1E5 |
| Primary Flat Orientation | {10-10}±5.0° |
| Primary Flat Length (mm) | 15.9 ±1.7 |
| Secondary Flat Length(mm) | 8.0 ±1.7 |
| Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| Edge Exclusion | 1 mm |
| TTV/Bow /Warp (um) | ≤15 /≤25 /≤25 |
| Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.5 nm |
| Edge Cracks By High Intensity Light | None | None | 1 allowed, ≤1 mm |
| Hex Plates By High Intensity Light | Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % |
Applications:
1. Power Electronics: SiC wafers are widely used in power electronic devices such as power converters, inverters, and high-voltage switches due to their high breakdown voltage and low power loss characteristics.
Electric Vehicles: SiC wafers are utilized in electric vehicle power electronics to improve efficiency and reduce weight, enabling faster charging and longer driving ranges.
2. Renewable Energy: SiC wafers play a crucial role in renewable energy applications like solar inverters and wind power systems, enhancing energy conversion efficiency and reliability.
3. Aerospace and Defense: SiC wafers are essential in aerospace and defense industries for high-temperature, high-power, and radiation-resistant applications, including aircraft power systems and radar systems.
4. Industrial Motor Drives: SiC wafers are employed in industrial motor drives to enhance energy efficiency, reduce heat dissipation, and increase the lifespan of equipment.
5. Wireless Communication: SiC wafers are used in RF power amplifiers and high-frequency applications in wireless communication systems, offering higher power density and improved performance.
6. High-Temperature Electronics: SiC wafers are suitable for high-temperature electronics applications where conventional silicon devices may not operate reliably, such as in downhole drilling and automotive engine control systems.
7. Medical Devices: SiC wafers find applications in medical devices like MRI machines and X-ray equipment due to their durability, high thermal conductivity, and radiation resistance.
8. Research and Development: SiC wafers are utilized in research laboratories and academic institutions for developing advanced semiconductor devices and exploring new technologies in the field of electronics.
9. Other Applications: SiC wafers are also employed in areas such as harsh environment sensors, high-power lasers, and quantum computing due to their unique properties and performance advantages.
Customization:
We offer customization services for Particle, Material, Grade, Orientation, and Diameter. You can choose between a free or low particle Silicon Carbide layer. Our Silicon Carbide Wafer comes with on-axis or off-axis orientation depending on your requirement. You can also choose the diameter of Silicon Carbide Wafer that you require.
The Silicon Carbide Wafer is available in different grades, including Production, Research, and Dummy. The Production-grade wafer is used in the production of electronic devices and is of the highest quality. The Research-grade wafer is used for research purposes, while the Dummy-grade wafer is used for testing and calibration purposes. The Silicon Carbide Wafer is also available in different types, including 4H, which is the most common type used in electronic devices.
FAQ:
Q: How to make a SiC wafer?
A: The process involves converting raw materials such as silica sand into pure silicon. The growth of silicon crystals using the Czochralski process, the slicing of the crystals into thin, flat discs, and the cleaning and preparation of the wafers for use in semiconductors devices.
Q: What is the process of making SiC?
A:Silicon carbide manufacturing process - GAB Neumann. Silicon carbide (SiC) is a compound of silicon and carbon with a chemical formula of SiC. The simplest manufacturing process for producing silicon carbide is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1600°C (2910°F) and 2500°C (4530°F).
Q: What are the uses of silicon carbide wafer?
A: In electronics, SiC materials are used with light-emitting diodes (LEDs) and detectors. In the semiconductor industry, a market where interest is red-hot, SiC wafers are used in electronic devices that operate at high temperatures, high voltages, or both.
Product Recommend:
1. 8inch SiC Wafer
2. 2inch 3inch 4inch SiC Substrate 330um Thickness 4H-N Type Production Grade
